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Pattern inspection device and pattern inspection method
US9188554B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9188554-B2 |
| Application number | US-201314403668-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 22, 2013 |
| Priority date | May 28, 2012 |
| Publication date | Nov 17, 2015 |
| Grant date | Nov 17, 2015 |
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Abstract
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Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.
First claim
Opening claim text (preview).
The invention claimed is: 1. A pattern inspection device comprising: an imaging unit that images an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit that generates a simulated electron beam image using a parameter based on design data, the parameter representing a characteristic of the electron beam image; and an inspection unit that inspects the pattern on the substrate by comparing the electron beam image of the pattern…
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Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9188554B2 cover?
- Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a …
- Who is the assignee on this patent?
- Hitachi High Tech Corp
- What technology area does this patent fall under?
- Primary CPC classification G01B15/04. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).