Nano structure semiconductor light emitting device, and system having the same

Patent metadata

Field	Value
Publication number	US-9184343-B2
Application number	US-201414455853-A
Country	US
Kind code	B2
Filing date	Aug 8, 2014
Priority date	Dec 3, 2013
Publication date	Nov 10, 2015
Grant date	Nov 10, 2015

Abstract

A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

First claim

What is claimed is:

1. A nanostructure semiconductor light emitting device comprising:
a substrate including a light emitting region and a non-light emitting region; and
a plurality of light emitting nanostructures disposed in the light emitting region and including,
nanocores having a first conductivity type semiconductor,
active layers disposed on the nanocores, and
second conductivity type semiconductor layers disposed on the active layers,

wherein the light emitting region includes a first region and a second region, and the non-light emitting region is disposed closer to the first region than the second region, and
wherein a distance between immediately adjacent ones of the light emitting nanostructures disposed in the first region is smaller than a distance between immediately adjacent ones of the light emitting nanostructures disposed in the second region.

2. The nanostructure semiconductor light emitting device of claim 1 , wherein the distance between the immediately adjacent ones of the light emitting nanostructures disposed in the first region is a function of at least one of the distance between the immediately adjacent ones of the light emitting nanostructures disposed in the second region and an area of the non-light emitting region.

3. The nanostructure semiconductor light emitting device of claim 1 , wherein the distance between immediately adjacent ones of the light emitting nanostructures disposed in the first region is 0.8 to 0.95 of the distance between the immediately adjacent ones of the light emitting nanostructures disposed in the second region.

4. The nanostructure semiconductor light emitting device of claim 1 , wherein the non-light emitting region includes at least a portion of a first electrode connected to a plurality of the nanocores, at least a portion of a second electrode connected to the second conductivity type semiconductor layers.

5. The nanostructure semiconductor light emitting device of claim 4 , wherein at least one of the first electrode and the second electrode includes a pad part and at least one finger part extending from the pad part.

6. The nanostructure semiconductor light emitting device of claim 1 , wherein the width of the first region is 15% or less of the length or the width of the light emitting region.

7. The nanostructure semiconductor light emitting device of claim 1 , wherein the lateral surfaces of a plurality of the respective nanocores are nonpolar m-planes.

8. The nanostructure semiconductor light emitting device of claim 1 , wherein the light emitting region includes a plurality of sub-regions emitting different wavelength bands of light from one another and at least one boundary region disposed between the sub-regions, and
the width of the boundary region is substantially identical to the interval between the light emitting nanostructures disposed in one sub-region of the plurality of sub-regions adjacent to the boundary region, or an average value of the intervals between the light emitting nanostructures disposed in respective sub-regions adjacent to the boundary region.

9. A nanostructure semiconductor light emitting device comprising:
a substrate including a non-light emitting region and a plurality of light emitting regions; and
a plurality of light emitting nanostructures disposed in the light emitting regions and including,
nanocores having a first conductivity type semiconductor,
active layers disposed on the nanocores, and
second conductivity type semiconductor layers disposed on the active layers,

wherein respective pitches between the light emitting nanostructures disposed in the respective light emitting regions are different from one another.

10. The nanostructure semiconductor light emitting device of claim 9 , wherein the plurality of light emitting regions include:
a first light emitting region having a plurality of light emitting nanostructures spaced apart from one another by a first pitch;
a second light emitting region having a plurality of light emitting nanostructures spaced apart from one another by a second pitch, different from the first pitch; and
a third light emitting region having a plurality of light emitting nanostructures spaced apart from one another by a third pitch, different from the first pitch and the second pitch.

11. The nanostructure semiconductor light emitting device of claim 10 , wherein the nanocores disposed in the respective first, second, and third light emitting regions have at least one of different widths from one another or different heights from one another.

12. The nanostructure semiconductor light emitting device of claim 10 , wherein the pluralities of light emitting nanostructures disposed in the respective first, second and third light emitting regions are structured to generate light of different wavelengths from one another.

13. The nanostructure semiconductor light emitting device of claim 12 , wherein the combination of the light of different wavelengths generated by the pluralities of light emitting nanostructures disposed in the respective first, second and third light emitting regions provides white light.

14. The nanostructure semiconductor light emitting device of claim 9 , wherein a boundary between at least a first light emitting region and a second light emitting region has a width equal one of the pitch between the light emitting nanostructures in the first light emitting region, the pitch between the light emitting nanostructures in the second light emitting region, and the average of the pitch between the light emitting nanostructures in the first light emitting region and the pitch between the light emitting nanostructures in the second light emitting region.

15. The nanostructure semiconductor light emitting device of claim 9 , wherein at least a portion of the plurality of light emitting regions includes a first region and a second region, and the non-light emitting region is disposed closer to the first region than the second region, and
the pitch between the light emitting nanostructures disposed in the first region is smaller than the pitch between the light emitting nanostructures disposed in the second region.

16. A system comprising:
a nanostructure semiconductor light emitting device;
a power supply providing electric power to the nanostructure semiconductor light emitting device; and
an output apparatus through which the light generated by the nanostructure semiconductor light emitting device comes out,
wherein the nanostructure semiconductor light emitting device comprises,
a substrate including a first light emitting region, a second light emitting region and a non-light emitting region, and
a plurality of light emitting nanostructures disposed in the first and the second light emitting region,
wherein the first light emitting region is closer to the non-light emitting region than the second light emitting region, and the interval between the light emitting nanostructures disposed in the first light emitting region is different from the interval between the light emitting nanostructures disposed in the second light emitting region.

17. The system of claim 16 , wherein the system is an electronic system or a mechanical system.

18. The system of claim 17 , wherein the output apparatus is a display panel using the nanostructure semiconductor light emitting device as a light source, an optical lens modifying the path of the light generated by the nanostructure semiconductor light emitting device, or a data communication apparatus using the nanostructure semiconductor light emitting de

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoo Geon Wook
• Heo Jae Hyeok
• Kang Sam Mook
• Seong Han Kyu

Classifications

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/858

  Means for heat extraction or cooling · CPC title

• H10H20/818

  within the light-emitting regions · CPC title

• H10H20/813 Primary

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title