Pre-conditioning a node of a circuit
US-11936373-B2 · Mar 19, 2024 · US
US9178507B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178507-B2 |
| Application number | US-201213687739-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 28, 2012 |
| Priority date | Nov 28, 2012 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Apparatus and methods for ultrasound transmit switching are provided. In certain implementations, a transmit switch includes a bias polarity control circuit, a bias circuit, a first high voltage field effect transistor (HVFET), and a second HVFET. The sources of the first and second HVFETs are connected to one another at a source node, the gates of the first and second HVFETs are connected to one another at a gate node, and the drains of the first and second HVFETs are connected to an input terminal and an output terminal, respectively. The bias circuit and the bias polarity control circuit are each electrically connected between the source node and the gate node. The bias polarity control circuit can turn on or off the HVFETs by controlling a polarity of a bias voltage across the bias circuit, such as by controlling a direction of current flow through the bias circuit.
Opening claim text (preview).
What is claimed is: 1. A transmit switch comprising: a first terminal; a second terminal; a first field effect transistor (FET) including a drain electrically connected to the first terminal, a gate electrically connected to a gate node, and a source electrically connected to a source node; a second FET including a drain electrically connected to the second terminal, a source electrically connected to the source node, and a gate electrically connected to the gate node; a b…
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
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