Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same
US-9484087-B2 · Nov 1, 2016 · US
Memristor structure with a dopant source
US9178153B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178153-B2 |
| Application number | US-201114233075-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2011 |
| Priority date | Jul 20, 2011 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
First claim
Opening claim text (preview).
What is claimed is: 1. A memristor including: an electrode; a conductive alloy including a conducting material, a dopant source material, and a dopant; and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material, wherein: the dopant source material is soluble in the conducting material; the dopant is soluble in the dopant sou…
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Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178153B2 cover?
- A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A meth…
- Who is the assignee on this patent?
- Zhang Minxian Max, Yang Jianhua, Williams R Stanley, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1658. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).