Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9178131B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178131-B2 |
| Application number | US-201414176315-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2014 |
| Priority date | Dec 2, 2008 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are ferroelectric field effect transistors and metal ferroelectric metal capacitors comprising one or more ferroelectric nanoshells. Methods for controlling spontaneous ferroelectric polarization in nanoshell devices are also disclosed.
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What is claimed is: 1. A method for controlling spontaneous ferroelectric polarization in a nanoshell device comprising: applying a voltage via one or more electrodes to switch the spontaneous ferroelectric polarization of a nanoshell device, the nanoshell device comprising an inner nanoshell surface having a radius of curvature in the range of from about 3 nm to about 300 nm, an outer nanoshell surface having a radius of curvature in the range of from about 5 nm to about 500 n…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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