Method for manufacturing an optoelectronic device
US-2024274747-A1 · Aug 15, 2024 · US
Semiconductor light emitting device
US9178111B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178111-B2 |
| Application number | US-201314083927-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2013 |
| Priority date | Dec 18, 2012 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film portion extends in a first direction perpendicular to a stacking direction from the electrode layer toward the first semiconductor layer. The first thin film portion has a first thickness. The thick film portion is arranged with the first thin film portion in a plane perpendicular to the stacking direction. An angle between the first direction and the cleavage plane is not less than 3 degrees and not more than 27 degrees. The first elongated electrode extends in the first direction in contact with the first thin film portion.
First claim
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What is claimed is: 1. A semiconductor light emitting device, comprising: an electrode layer; a first semiconductor layer of a first conductivity type including a crystal having a cleavage plane, the first semiconductor layer including a first thin film portion extending in a first direction perpendicular to a third direction from the electrode layer toward the first semiconductor layer, the first thin film portion having a first thickness, and a thick film portion arranged with…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178111B2 cover?
- According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film …
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/818. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).