Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Light emitting device and light emitting device package
US9178108B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178108-B2 |
| Application number | US-97901210-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2010 |
| Priority date | May 24, 2010 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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- Title
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Abstract
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The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A light emitting device comprising: a first conduction type semiconductor layer; an active layer formed on the first conduction type semiconductor layer; and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a plurality of quantum well layers and a plurality of quantum barrier layers, a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10H20/812Primary
Electricity · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178108B2 cover?
- The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum bar…
- Who is the assignee on this patent?
- Moon Yong Tae, Lee Jeong Sik, Park Joong Seo, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/812. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).