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Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities
US9178103B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178103-B2 |
| Application number | US-201313962979-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 9, 2013 |
| Priority date | Aug 9, 2013 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities.
First claim
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What is claimed is: 1. A method for forming a chalcogenide semiconductor absorber material, said method comprising: disposing a substrate with metallic precursors thereon, in a furnace; vaporizing sodium to produce a sodium vapor; selenizing by causing thermal reaction between selenium and said metallic precursors in a selenization reaction in said furnace; sulfurizing by causing thermal reaction between sulfur and said metallic precursors in a sulfurization reaction in said…
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- What does patent US9178103B2 cover?
- A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with rea…
- Who is the assignee on this patent?
- Tsmc Solar Ltd
- What technology area does this patent fall under?
- Primary CPC classification C23C12/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).