Semiconductor device and power conversion device
US-2024355888-A1 · Oct 24, 2024 · US
US9178014B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178014-B2 |
| Application number | US-201214383942-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2012 |
| Priority date | Mar 22, 2012 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Official abstract text for this publication.
A semiconductor device includes a semiconductor substrate, and a field plate portion formed on a front surface of a non-cell region. The non-cell region includes a plurality of FLR layers. The FLR layers extend in a first direction along a circumference of the cell region. The field plate portion includes: an insulating film; a plurality of first conducting layers each disposed along a corresponding FLR layer; and a plurality of second conducting layers. The second conducting layers are disposed on part of their corresponding FLR layers in an intermittent manner along the corresponding FLR layers. Each of the second conducting layers includes a front surface portion, a first contact portion, and a second contact portion. Any of the first contact portions and the second contact portions are not provided at positions adjacent to the first contact portion and the second contact portion in the second direction.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a semiconductor substrate having a cell region where a semiconductor element is formed, and a non-cell region provided around the cell region; and a field plate portion formed on a front surface of the non-cell region, wherein: the non-cell region includes: a substrate layer having a first-conductivity-type; and a plurality of field limiting ring layers formed on a front surface of the substrate layer, extendin…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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