Semiconductor device and method for manufacturing semiconductor device
US-2024079469-A1 · Mar 7, 2024 · US
Semiconductor device with edge termination and method for manufacturing a semiconductor device
US9178013B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178013-B2 |
| Application number | US-201213366707-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 6, 2012 |
| Priority date | Feb 6, 2012 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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According to an embodiment, a semiconductor device includes a semiconductor body having a first semiconductor material and a second semiconductor material having a band gap larger than a band gap of the first semiconductor material. A first pn-junction is formed in the first semiconductor material. A second pn-junction is formed by the second semiconductor material and extends deeper into the semiconductor body than the first pn-junction. The second semiconductor material is in contact with the first semiconductor material and forms part of an edge termination zone of the semiconductor device.
First claim
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What is claimed is: 1. A semiconductor device, comprising: a semiconductor body comprising a first semiconductor material and further comprising a second semiconductor material that extends into the semiconductor body from an uppermost surface of the semiconductor body and that has a band gap larger than a band gap of the first semiconductor material; a first pn-junction formed in the first semiconductor material; at least one of a second pn-junction and a heterojunction form…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9178013B2 cover?
- According to an embodiment, a semiconductor device includes a semiconductor body having a first semiconductor material and a second semiconductor material having a band gap larger than a band gap of the first semiconductor material. A first pn-junction is formed in the first semiconductor material. A second pn-junction is formed by the second semiconductor material and extends deeper into the s…
- Who is the assignee on this patent?
- Schmidt Gerhard R, Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10D62/105. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).