Protective structure and method for producing a protective structure

Patent metadata

Field	Value
Publication number	US-9177950-B2
Application number	US-201414566751-A
Country	US
Kind code	B2
Filing date	Dec 11, 2014
Priority date	May 24, 2007
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

Described herein is a protective structure. The protective structure includes a semiconductor substrate, a first diode disposed at least one of in or on the semiconductor substrate and a diode arrangement disposed at least one of in or on the semiconductor substrate. The diode arrangement includes a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode. The diode arrangement is in parallel with the first diode.

First claim

What is claimed is:

1. A protective structure comprising:
a semiconductor substrate;
a first diode disposed at least one of in or on the semiconductor substrate;
a diode arrangement disposed at least one of in or on the semiconductor substrate, wherein the diode arrangement comprises a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode; and
wherein the diode arrangement is in parallel with the first diode.

2. The protective structure of claim 1 , wherein the first diode and the second diode comprise an opposite polarity.

3. The protective structure of claim 1 wherein:
the first diode comprises a PIN or NIP diode; and
the second diode comprises a PIN or NIP diode.

4. The protective structure of claim 1 further comprising a common connection device connecting a first terminal of the first diode and a first terminal of the second diode.

5. The protective structure of claim 1 , wherein the semiconductor substrate comprises a second terminal of the second diode and a second terminal of the TVS diode.

6. The protective structure of claim 1 further comprising an electrical insulation structure disposed between the diode arrangement and the first diode.

7. The protective structure of claim 4 further comprising at least one connecting zone disposed between the common connection device and a first terminal of the TVS diode.

8. A method of forming a protective structure comprising:
providing a semiconductor substrate;
forming a first diode at least one of in or on the semiconductor substrate;
forming a diode arrangement at least one of in or on the semiconductor substrate, wherein the diode arrangement comprises a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode; and
wherein the diode arrangement is in parallel with the first diode.

9. The method of claim 8 , wherein the first diode and the second diode comprise an opposite polarity.

10. The protective structure method of claim 8 wherein:
the first diode comprises a PIN or NIP diode; and
the second diode comprises a PIN or NIP diode.

11. The method of claim 8 further comprising forming a common connection device for connecting a first terminal of the first diode and a first terminal of the second diode.

12. The method of claim 8 , wherein the semiconductor substrate comprises a second terminal of the second diode and a second terminal of the TVS diode.

13. The method of claim 8 further comprising forming an electrical insulation structure between the diode arrangement and the first diode.

14. The method of claim 11 further comprising forming at least one connecting zone between the common connection device and a first terminal of the TVS diode.

Assignees

• Infineon Technologies Ag

Inventors

• Schmenn Andre
• Sojka Damian
• Ahrens Carsten

Classifications

• H10P32/00

  Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00) · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10D8/50

  PIN diodes · CPC title

• H10D8/041

  of multilayer diodes · CPC title

• H10D89/611 Primary

  using diodes as protective elements · CPC title