Semiconductor substrate
US-2024105512-A1 · Mar 28, 2024 · US
SiC semiconductor device and method of manufacturing the same
US9171908B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9171908-B2 |
| Application number | US-201414205964-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2014 |
| Priority date | Mar 22, 2013 |
| Publication date | Oct 27, 2015 |
| Grant date | Oct 27, 2015 |
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Abstract
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A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus), the ratio of the concentration of the element A to the concentration of the element D in the combination(s) being higher than 0.40 but lower than 0.95, the concentration of the element D forming the combination(s) being not lower than 1×10 18 cm −3 and not higher than 1×10 22 cm −3 , an SiC layer formed on the first face, a first electrode formed on the first face side, and a second electrode formed on the second face.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: an n-type SiC substrate having first face and second face, the n-type SiC substrate containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being at least one of a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and a combination of B (boron) and P (phosphorus), a ratio of a concentration…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/3408Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9171908B2 cover?
- A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and …
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3408. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).