Multiwall carbon nanotube opto-electronic devices

US9166172B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9166172-B2
Application numberUS-201113878912-A
CountryUS
Kind codeB2
Filing dateOct 11, 2011
Priority dateOct 11, 2010
Publication dateOct 20, 2015
Grant dateOct 20, 2015

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Abstract

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A high-sensitivity detector for opto-electronic detection using multiwall carbon nanotubes (MWCNTs) is provided. More specifically, multiwall carbon nanotube films demonstrate an infrared bolometric photoresponse higher than SWCNT films at room temperature. The observed D* exceeding 3.3×10 6 cm Hz 1/2 /W with MWCNT-film bolometers and can be further improved to over 1×10 7 cm Hz 1/2 /W by adding graphene flakes. The response time of about 1-2 milliseconds with MWCNT bolometers is more than an order of magnitude shorter than that of SWCNT bolometers. For individual MWCNTs with specially designed asymmetric Schottky contacts, one on the sidewall and the other covering the end, the photocurrent has been efficiently harvested and provides a higher detectivity of 6.2×10 9 cm·Hz 1/2 /W at room temperature, which is one order of magnitude higher than the convectional VO x detector and makes MWCNT competitive for practical optoelectronic detections over infrared and even longer wavelength range.

First claim

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What is claimed is: 1. An opto-electronic detector for high-sensitivity photo detection, the detector comprising: a pair of electrodes; at least one multiwall carbon nanotube electrically connecting the pair of electrodes, wherein each of the pair of electrodes are in contact with the at least one multiwall carbon nanotube, and wherein each electrode of the pair of electrodes comprises a Schottky contact on the multiwall carbon nanotube; a current source providing a current to…

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What does patent US9166172B2 cover?
A high-sensitivity detector for opto-electronic detection using multiwall carbon nanotubes (MWCNTs) is provided. More specifically, multiwall carbon nanotube films demonstrate an infrared bolometric photoresponse higher than SWCNT films at room temperature. The observed D* exceeding 3.3×10 6 cm Hz 1/2 /W with MWCNT-film bolometers and can be further improved to over 1×10 7 cm Hz 1/2 /W by add…
Who is the assignee on this patent?
Lu Rongtao, Wu Judy Zhihong, Univ Kansas
What technology area does this patent fall under?
Primary CPC classification H01L51/0048. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).