Method of manufacturing a magnetoresistive-based device

Patent metadata

Field	Value
Publication number	US-9166155-B2
Application number	US-201414264520-A
Country	US
Kind code	B2
Filing date	Apr 29, 2014
Priority date	Aug 14, 2012
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.

First claim

What is claimed is:

1. A method of manufacturing a spin-torque magnetoresistive device, the method comprising:
forming a first electrically conductive electrode layer over a substrate,
forming at least one layer of first magnetic material over the first electrically conductive electrode;
forming a first tunnel barrier layer over the at least one layer of first magnetic material;
forming at least one layer of second magnetic material over the first tunnel barrier layer;
for…

Assignees

• Everspin Technologies Inc

Inventors

• Deshpande Sarin A
• Aggarwal Sanjeev

Classifications

• G11C11/161 Primary

  Physics · mapped topic

• G11B5/84

  Physics · mapped topic

• H01L43/12 Primary

  Electricity · mapped topic

• H10N50/10

  Electricity · mapped topic

• H10N50/01 Primary

  Electricity · mapped topic