Magnetic random access memory with multilayered seed structure
US-2015340598-A1 · Nov 26, 2015 · US
US9166149B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166149-B2 |
| Application number | US-201414530044-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 31, 2014 |
| Priority date | Nov 27, 2012 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.
Opening claim text (preview).
What is claimed is: 1. A magnetic device, comprising: a substrate, comprising: a bottom electrode; a registration layer configured to store data; and a barrier layer disposed on the registration layer; a sensing block which is patterned to be distributed on the barrier layer of the substrate; and a repair layer disposed conformal to the substrate and the sensing block; wherein the barrier layer of the substrate is configured to have a tunneling effect when a bias volta…
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