Magnetic random access memory with multilayered seed structure
US-2015340598-A1 · Nov 26, 2015 · US
US9166147B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166147-B2 |
| Application number | US-201214113562-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2012 |
| Priority date | Apr 27, 2011 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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A ferroelectric device includes a first electrode, a second electrode spaced apart from the first electrode, and a ferroelectric element arranged between the first and second electrodes. The ferroelectric element has a plurality of quasistatic strain configurations that are selectable by the application of an electric field and the device has selectable electromechanical displacement by the application of the electric field.
Opening claim text (preview).
We claim: 1. An electronic device, comprising: a first circuit; a quasistatic variable capacitor selectively connectable to said first circuit to form a combined circuit; and a second circuit selectively connectable to said quasistatic variable capacitor, wherein said quasistatic variable capacitor comprises: a first electrode, a second electrode spaced apart from said first electrode, and a ferroelectric element arranged between said first and second electrodes, w…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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