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Group III nitride semiconductor light-emitting device including a superlatice layer
US9166102B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166102-B2 |
| Application number | US-201313920684-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 18, 2013 |
| Priority date | Mar 31, 2010 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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Abstract
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A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In y Ga 1-y N (0<y<1) layer, an Al x Ga 1-x N (0<x<1) layer, and a GaN layer. The n-type-layer-side cladding layer has a four-layer periodic structure including a second GaN layer interposed between the In y Ga 1-y N (0<y<1) layer and the Al x Ga 1-x N (0<x<1) layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A Group III nitride semiconductor light-emitting device comprising: an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers comprising a Group III nitride semiconductor, wherein the n-type-layer-side cladding layer comprises a superlattice layer having a periodic structure comprising four layers as one periodic unit, wherein the periodic unit comprises a first GaN layer, an In y Ga 1-y N (0<…
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Classifications
Electricity · mapped topic
- H10H20/811Primary
Electricity · mapped topic
- H10H20/812Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L33/06Primary
Electricity · mapped topic
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- What does patent US9166102B2 cover?
- A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In y Ga 1-y N (0<y<1) layer, an Al x Ga 1-x N (0<x…
- Who is the assignee on this patent?
- Toyoda Gosei Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/811. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).