Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Light emitting device
US9166100B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166100-B2 |
| Application number | US-201213344814-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2012 |
| Priority date | May 18, 2011 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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Abstract
Official abstract text for this publication.
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and an electron blocking layer between the active layer and the second conductive semiconductor layer, wherein the active layer includes a plurality of well layers and barrie…
Assignees
Inventors
Classifications
- H10H20/812Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L33/06Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9166100B2 cover?
- Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer…
- Who is the assignee on this patent?
- Han Dae Seob, Moon Yong Tae, Bong Ha Jong, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/812. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).