Semiconductor devices and methods of manufacturing thereof
US-2024105795-A1 · Mar 28, 2024 · US
Gate electrode with stabilized metal semiconductor alloy-semiconductor stack
US9166014B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166014-B2 |
| Application number | US-201313911669-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 6, 2013 |
| Priority date | Jun 6, 2013 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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- Title
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Abstract
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A gate structure is provided on a channel portion of a semiconductor substrate. The gate structure may include an electrically conducting layer present on a gate dielectric layer, a semiconductor-containing layer present on the electrically conducting layer, a metal semiconductor alloy layer present on the semiconductor-containing layer, and a dielectric capping layer overlaying the metal semiconductor alloy layer. In some embodiments, carbon and/or nitrogen can be present within the semiconductor-containing layer, the metal semiconductor alloy layer or both the semiconductor-containing layer and the metal semiconductor alloy layer. The presence of carbon and/or nitrogen within the semiconductor-containing layer and/or the metal semiconductor alloy layer provides stability to the gate structure. In another embodiment, a layer of carbon and/or nitrogen can be formed between the semiconductor-containing layer and the metal semiconductor alloy layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a gate structure present on a channel portion of a semiconductor substrate, wherein the gate structure comprises: a gate dielectric layer overlaying said channel portion of the semiconductor substrate, an electrically conducting layer present directly on a topmost surface of the gate dielectric layer, said electrically conducing layer comprises at least one metal that provides a threshold voltage shift to said gate struc…
Assignees
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Classifications
- H10D64/01318Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9166014B2 cover?
- A gate structure is provided on a channel portion of a semiconductor substrate. The gate structure may include an electrically conducting layer present on a gate dielectric layer, a semiconductor-containing layer present on the electrically conducting layer, a metal semiconductor alloy layer present on the semiconductor-containing layer, and a dielectric capping layer overlaying the metal semic…
- Who is the assignee on this patent?
- IBM, Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D64/01318. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).