Display device and electronic device including display device

Patent metadata

Field	Value
Publication number	US-9165502-B2
Application number	US-201414540326-A
Country	US
Kind code	B2
Filing date	Nov 13, 2014
Priority date	Oct 21, 2009
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

First claim

The invention claimed is:

1. A display device comprising:
a scan line;
a signal line;
a wiring; and
a pixel region comprising:
a first transistor;
a second transistor; and
a light-emitting element,

wherein the second transistor comprises a first gate electrode, a second gate electrode and an oxide semiconductor layer, the first gate electrode being electrically connected to the scan line,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a gate electrode of the first transistor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the signal line,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first electrode of the light-emitting element,
wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element,
wherein the oxide semiconductor layer includes a channel formation region,
wherein when the second transistor is off state, a drain current of the second transistor per a channel width of 1 μm is less than or equal to 1×10 −16 A/μm, and
wherein the first gate electrode and the second gate electrode overlap with the channel formation region and sandwich the oxide semiconductor layer.

2. The display device according to claim 1 , wherein the oxide semiconductor layer of the second transistor has a band gap of greater than or equal to 2 eV.

3. The display device according to claim 1 , wherein the oxide semiconductor layer of the second transistor has a hydrogen concentration of less than or equal to 5×10 19 /cm 3 .

4. The display device according to claim 1 , wherein a carrier concentration of the oxide semiconductor layer is less than 1×10 14 /cm 3 .

5. The display device according to claim 1 , wherein the second transistor is configured to hold the first transistor in an on state and connect the wiring to the light-emitting element to display a still image.

6. The display device according to claim 1 , wherein the wiring supplies a DC current.

7. The display device according to claim 1
wherein the light-emitting element comprises:
a layer containing a light-emitting organic substance between the first and the second electrodes.

8. An electronic device comprising the display device according to claim 1 .

9. The display device according to claim 1 , wherein the display device is a lighting device.

10. A display device comprising:
a scan line;
a signal line;
a wiring; and
a pixel region comprising:
a first transistor;
a second transistor; and
a light-emitting element,

wherein the second transistor comprises a first gate electrode, a second gate electrode and a first oxide semiconductor layer, the first gate electrode being electrically connected to the scan line,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a gate electrode of the first transistor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the signal line,
wherein the first transistor comprises a second oxide semiconductor layer,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first electrode of the light-emitting element,
wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element,
wherein the first oxide semiconductor layer includes a channel formation region,
wherein, when the second transistor is off state, a drain current of the second transistor per a channel width of 1 μm is less than or equal to 1×10 −16 A/μm, and
wherein the first gate electrode and the second gate electrode overlap with the channel formation region and sandwich the first oxide semiconductor layer.

11. The display device according to claim 10 , wherein the first oxide semiconductor layer of the second transistor has a band gap of greater than or equal to 2 eV.

12. The display device according to claim 10 , wherein the first oxide semiconductor layer of the second transistor has a hydrogen concentration of less than or equal to 5×10 19 /cm 3 .

13. The display device according to claim 10 , wherein a carrier concentration of the first oxide semiconductor layer is less than 1×10 14 /cm 3 .

14. The display device according to claim 10 , wherein the second transistor is configured to hold the first transistor in an on state and connect the wiring to the light-emitting element to display a still image.

15. The display device according to claim 10 , wherein the wiring supplies a DC current.

16. The display device according to claim 10 ,
wherein the light-emitting element comprises:
a layer containing a light-emitting organic substance between the first and the second electrodes.

17. An electronic device comprising the display device according to claim 10 .

18. The display device according to claim 10 , wherein the display device is a lighting device.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koyama Jun
• Miyake Hiroyuki

Classifications

• G09G3/3208 Primary

  organic, e.g. using organic light-emitting diodes [OLED] · CPC title

• G09G2330/021

  Power management, e.g. power saving · CPC title

• G09G3/3233 Primary

  with pixel circuitry controlling the current through the light-emitting element · CPC title

• G09G3/2003

  Display of colours (specific for liquid crystal displays G09G3/3607) · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title