Forming a membrane having curved features

Patent metadata

Field	Value
Publication number	US-9159899-B2
Application number	US-201313892489-A
Country	US
Kind code	B2
Filing date	May 13, 2013
Priority date	Apr 13, 2011
Publication date	Oct 13, 2015
Grant date	Oct 13, 2015

Abstract

Processes for making a membrane having a curved feature are disclosed. Recesses each in the shape of a reversed, truncated pyramid are formed in a planar substrate surface by KOH etching through a mask. An oxide layer is formed over the substrate surface. The oxide layer can be stripped leaving rounded corners between different facets of the recesses in the substrate surface, and the substrate surface can be used as a profile-transferring substrate surface for making a membrane having concave curved features. Alternatively, a handle layer is attached to the oxide layer and the substrate is removed until the backside of the oxide layer becomes exposed. The exposed backside of the oxide layer includes curved portions protruding away from the handle layer, and can provide a profile-transferring substrate surface for making a membrane having convex curved features.

First claim

What is claimed is:

1. An apparatus, comprising:
a base wafer; and
a membrane attached to a top surface of the base wafer, where the membrane is a continuous layer and includes a planar portion and a curved portion protruding from the planar portion, the curved portion includes a flat, end wall parallel to the top surface of the base wafer and multiple flat, slanted sidewalls adjacent to the end wall, and respective intersections between the end wall and each of the slanted sidewalls and respective intersections between each pair of adjacent sidewalls are rounded, wherein at least part of the curved portion is thinner than the planar portion of the membrane.

2. The apparatus of claim 1 , wherein the curved portion protrudes away from the base wafer.

3. The apparatus of claim 1 , wherein base wafer includes an aperture and the curved portion protrudes into the aperture in the base wafer.

4. The apparatus of claim 1 , wherein the membrane is a silicon oxide membrane.

5. The apparatus of claim 1 , wherein a height of the curved portion is between 5-10 microns.

6. The apparatus of claim 1 , wherein a lateral dimension of the curved portion is between 100-200 microns.

7. The apparatus of claim 1 , wherein a thickness of the membrane is between 1-3 microns.

8. The apparatus of claim 1 , further comprising:
a piezoelectric actuation assembly formed over a top surface of the membrane, the piezoelectric actuation assembly including a curved portion that conforms to a profile of the curved portion of the membrane.

9. The apparatus of claim 8 , wherein the piezoelectric actuation assembly includes a conductive reference electrode layer, a conductive drive electrode layer, and a sputtered piezoelectric layer between the reference electrode layer and the drive electrode layer.

Assignees

• Fujifilm Corp

Inventors

• De Brabander Gregory
• Nepomnishy Mark

Classifications

• H10D62/10

  Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies · CPC title

• B41J2/1632

  machining · CPC title

• B41J2/1642

  thin film formation by CVD [chemical vapor deposition] · CPC title

• H01L29/06

  Electricity · mapped topic

• B41J2/1629

  wet etching · CPC title