LED on silicon substrate using zinc-sulfide as buffer layer

Patent metadata

Field	Value
Publication number	US-9159869-B2
Application number	US-201414158426-A
Country	US
Kind code	B2
Filing date	Jan 17, 2014
Priority date	Aug 3, 2011
Publication date	Oct 13, 2015
Grant date	Oct 13, 2015

Abstract

A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50 nm thick, and the n-type GaN layer is at least 2000 nm thick. Growing the n-type GaN layer on the ZnS buffer layer reduces lattice defect density in the n-type layer. The ZnS buffer layer provides a good lattice constant match with the silicon substrate and provides a compound polar template for subsequent GaN growth. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate and the ZnS buffer layer are then removed. Electrodes are added and the structure is singulated to form finished LED devices.

First claim

What is claimed is:

1. A method of manufacturing a light emitting device, comprising:
forming a zinc-sulfide (ZnS) layer directly on a silicon substrate;
forming a zinc-telluride (ZnTe) layer directly on the ZnS layer;
forming a template layer on the ZnTe layer;
forming an epitaxial light emitting device structure on the template layer, wherein the epitaxial light emitting device structure includes an n-type semiconductor layer, a p-type semiconductor layer and an active lay…

Assignees

• Toshiba Kk

Inventors

• Chen Zhen

Classifications

• H10W90/754

  Electricity · mapped topic

• H10W90/734

  Electricity · mapped topic

• H10W72/884

  Electricity · mapped topic

• H10H20/82

  Electricity · mapped topic

• H10H20/857

  Electricity · mapped topic