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US-2024414942-A1 · Dec 12, 2024 · US
Semiconductor device
US9159840B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9159840-B2 |
| Application number | US-201414456330-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 11, 2014 |
| Priority date | Sep 22, 2011 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a first conductive film and a second conductive film over an insulating surface; an oxide semiconductor film over and in contact with the first conductive film and the second conductive film; a third conductive film over the oxide semiconductor film, the third conductive film being in contact with the first conductive film; a fourth conductive film over the oxide semiconductor film, the fourth conductive film b…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9159840B2 cover?
- Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive film…
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).