Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Method of silicon etch for trench sidewall smoothing
US9159574B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9159574-B2 |
| Application number | US-201313973541-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 22, 2013 |
| Priority date | Aug 27, 2012 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
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Abstract
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Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of smoothing a sidewall of a trench formed in a semiconductor wafer, the method comprising: supporting the semiconductor wafer with a pedestal in a processing chamber, the semiconductor wafer comprising the trench; introducing a fluorine containing gas into the processing chamber; introducing a polymerization gas into the processing chamber concurrently with the fluorine containing gas; delivering power to the processing chamber to generate pl…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W20/023Primary
Electricity · mapped topic
- H10P50/242Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9159574B2 cover?
- Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma genera…
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification H10W20/023. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).