Memory module, memory device and memory system
US-2024331758-A1 · Oct 3, 2024 · US
Methods and apparatuses for refreshing memory
US9159397B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9159397-B2 |
| Application number | US-201213693865-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 4, 2012 |
| Priority date | Dec 4, 2012 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
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Abstract
Official abstract text for this publication.
Apparatuses and methods for memory refreshing memory cells is described. An example method includes receiving a self refresh command at a memory. The method further includes refreshing the memory at a first refresh rate after receiving the self refresh command. The method further includes refreshing the memory at a second refresh rate in response to a determination that each memory cell of the memory has been refreshed at the first refresh rate. The first refresh rate is greater than a second refresh rate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method, comprising: receiving a self refresh command at a memory; initializing a count provided by a counter responsive to receipt of the self refresh command; refreshing the memory at a first refresh rate in response to receiving the self refresh command by changing the count provided by the counter, wherein the count corresponds to an address of memory cells of the memory, wherein refreshing progresses through the memory as the count changes; deter…
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Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G11C11/40615Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US9159397B2 cover?
- Apparatuses and methods for memory refreshing memory cells is described. An example method includes receiving a self refresh command at a memory. The method further includes refreshing the memory at a first refresh rate after receiving the self refresh command. The method further includes refreshing the memory at a second refresh rate in response to a determination that each memory cell of the …
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C11/40615. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Oct 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).