Semiconductor device

Patent metadata

Field	Value
Publication number	US-9158107-B2
Application number	US-201213626600-A
Country	US
Kind code	B2
Filing date	Sep 25, 2012
Priority date	Oct 21, 2011
Publication date	Oct 13, 2015
Grant date	Oct 13, 2015

Abstract

Provided is technique for a semiconductor device including a substrate and a tilting plate which is tiltable relatively to the substrate, the technique being capable of effectively suppressing warpage of the tilting plate. The semiconductor device of the present specification includes a substrate and a tilting plate which is tiltable relatively to the substrate. In the semiconductor device, a rib formed of wavelike portions where a plate thickness is substantially uniform is formed on the tilting plate.

First claim

What is claimed is:

1. A plate-shaped member formed by using a semiconductor process and having a planar expansion, comprising:
a flat area substantially coplanar with a plane of the plate-shaped member; and
a rib in a different position than the flat area in a direction normal to the plane,
wherein the rib is recessed on one side and equally projecting on another side of the plate-shaped member.

2. The plate-shaped member according to claim 1 , wherein the rib and the flat area are connected to each other through an inclined portion that is at an oblique angle to the plane.

3. The plate-shaped member according to claim 1 , further comprising:
a conductive layer and an insulating film which covers a periphery of the conductive layer.

4. The plate-shaped member according to claim 1 , wherein shapes of the rib and flat area are determined by using a structure optimization method which minimizes an amount in deformation of the plate-shaped member with respect to internal stress.

5. A semiconductor device comprising:
a substrate; and
a tilting plate which is tiltable relatively to the substrate, including:
a flat area substantially coplanar with a plane of the plate-shaped member; and
a rib configured to relieve influence of remaining stress in a direction normal to the plane,

wherein the rib is recessed on one side and equally projecting on another side of the tilting plate.

6. The semiconductor device according to claim 5 , wherein an inclined portion that is at an oblique angle to the plane is formed on a side wall of the rib.

7. The semiconductor device according to claim 5 , wherein the tilting plate includes a conductive layer and an insulating film which covers a periphery of the conductive layer.

8. The semiconductor device according to claim 5 , further comprising a mirror which is fixed to the tilting plate.

9. The semiconductor device according to claim 5 , wherein a shape of the rib of the tilting plate is determined by using a structure optimization method which minimizes an amount in deformation of the tilting plate with respect to internal stress.

10. A plate-shaped member formed by using a semiconductor process and having a planar expansion, comprising:
a flat area substantially coplanar with a plane of the plate-shaped member; and
a rib in a different position than the flat area in a direction normal to the plane,
wherein the rib is recessed on one side and equally projecting on an other side of the plate-shaped member, and the rib and the flat area are connected to each other through an inclined portion that is at an oblique angle to the plane.

Assignees

• Toyota Chuo Kenkyusho Kk

Inventors

• Fujitsuka Norio
• Ozaki Takashi
• Shimaoka Keiichi
• Nonomura Yutaka

Classifications

• G02B26/0841 Primary

  the reflecting element being moved or deformed by electrostatic means · CPC title