Manufacture method for a surface mounted power LED support and its product

Patent metadata

Field	Value
Publication number	US-9157610-B2
Application number	US-201013579110-A
Country	US
Kind code	B2
Filing date	Aug 25, 2010
Priority date	Jun 4, 2010
Publication date	Oct 13, 2015
Grant date	Oct 13, 2015

Abstract

A manufacture method for a surface mounted power LED support comprises providing a wiring board having both sided metal layers. In addition, the method comprises forming a hole. Further, the method comprises setting a metal layer in the surface of the hole. Still further, the method comprises thickening the metal layer of the wiring board. The method also comprises etching the metal layer of the wiring board. Moreover, the method comprises cutting the wiring board to form single support unit. A surface mounted power LED support comprises a both sided wiring board, a hole formed in the wiring board and wiring layers set on the surface of the wiring board.

First claim

What is claimed is:

1. A method for manufacturing a surface mounted power LED bracket, comprising steps of:
1) preparing a double-sided metal layer coated circuit substrate comprising: providing an ordinary insulating board as a substrate for the circuit substrate, coating an upper surface of the substrate with a first metal layer and a lower surface of the substrate with a second metal layer, thereby forming the double-sided metal layer coated circuit substrate;
2) forming a hole, comprising: forming at least one hole in the circuit substrate by a mechanical process, a laser process or an etching process;
3) providing a hole-wall metal layer, comprising: providing a metal layer on an inner wall of the hole by a plating process, a deposition process or a screen printing process;
4) increasing a thickness of a metal layer, comprising: increasing a thickness of the metal layer on the lower surface of the circuit substrate, by forming a third metal layer integrated with the second metal layer by a hot melt process, to form a thick metal layer, such that a metal layer at a bottom of the hole has a thickness that can carry an LED chip;
wherein the third metal layer comprises a metal foil, and wherein forming the thick metal layer includes:
laminating and bonding the metal foil to the second metal layer; and
integrally connecting the metal foil with the second metal layer by the hot melt process to form the thick metal layer;

5) etching the metal layers, comprising: processing the metal layers on the circuit substrate by an etching process, to form a first circuit layer on the upper surface of the circuit substrate and a second circuit layer on the lower surface of the circuit substrate, wherein the first circuit layer, the second circuit layer and the hole form a power LED bracket structure; and
6) separating a power LED bracket unit from the power LED bracket structure, comprising:
separating, by a cutting process, a power LED bracket unit from the power LED bracket structure formed by the above steps.

2. The method according to claim 1 , wherein before the step 4), the method further comprises:
an etching step, comprising: removing most of the second metal layer on the lower surface of the circuit substrate by the etching process, to remain at least the second metal layer surrounding the bottom of the hole as a basis of the second circuit layer.

3. The method according to claim 1 , wherein,
in the step 2), at least one small electrode hole is formed at each side of two sides of the hole, to form a part of an electrode;
in the step 3), a hole-wall metal conductive layer is provided on an inner wall of each small electrode hole, to form a part of the electrode;
before the step 4), the method further comprises an etching step, comprising: removing most of the second metal layer on the lower surface of the circuit substrate by the etching process, to remain at least the second metal layer surrounding the bottom of the hole and a bottom of each small electrode hole; and
in the step 5), the formed first circuit layer comprises: a lead connecting portion surrounding the hole, and a first positive and negative electrode layer electrically connected to the lead connecting portion; the formed second circuit layer comprises: a chip mounting portion at the bottom of the hole, and a second positive and negative electrode layer electrically insulated from the chip mounting portion, wherein the chip mounting portion is configured carry the LED chip, and the first positive and negative electrode layer is electrically connected to the second positive and negative electrode layer; the formed first positive and negative electrode layer and the formed second positive and negative electrode layer correspond to the small electrode holes and are electrically connected to the hole-wall metal conductive layer on the inner wall of each small electrode hole, wherein the first positive and negative electrode layer, the second positive and negative electrode layer and the hole-wall metal conductive layers of the small electrode holes form a positive electrode and a negative electrode of the bracket.

4. The method according to claim 3 , wherein,
in the step 1), the insulating board is a fiber-glass cloth substrate, a CEM-3 substrate, a CEM-1 substrate or a bismaleimide-triazine resin (BT) substrate, and the metal layers coated on the insulating board are copper layers;
in the step 2), the formed hole is a hole array of M rows×N columns;
in the step 3), the hole-wall metal layer is a copper layer or a silver layer; and
in the step 4), the third metal layer is a copper layer.

5. The method according to claim 1 , wherein before the step 6), the method further comprises a step of: installing a cup-shaped covering board, comprising:
sub-step 1), preparing an insulating substrate;
sub-step 2), forming a cup-shaped body, which is corresponded to the hole formed in the step 2), on the substrate by a mechanical process, a laser process or an etching process, a diameter of an opening of the cup-shaped body being larger than a diameter of the hole, thereby forming the cup-shaped covering board; and
sub-step 3), installing and bonding the cup-shaped covering board on the upper surface of the circuit substrate, with the hole being exposed and the other portions of the first circuit layer except for the lead connecting portion being covered.

6. The method according to claim 5 , wherein,
in the sub-step 2), the insulating substrate is a fiber-glass cloth substrate, a CEM-3 substrate, a CEM-1 substrate, a FR-1 substrate, a FR-2 substrate or a bismaleimide-triazine resin (BT) substrate, and the formed cup hole is of a reflection cup shape or a cylindrical shape;
after the sub-step 2), the method further comprises a sub-step of coating a black material on an upper surface of the cup-shaped covering board to increase a contrast ratio of a device; and
in the sub-step 3), the cup-shaped covering board is bonded to the upper surface of the circuit substrate via an adhesive film.

7. The method according to claim 1 , wherein,
in the step 2), the formed hole is a blind hole, and a bottom of the blind hole is formed by the second metal layer;
in the step 4), the thickness of the metal layer on the lower surface of the circuit substrate is increased by the hot melt process, the second metal layer is provided thereon with the third metal layer by the hot melt process, to form the integral thick metal layer, such that the metal layer at the bottom of the blind hole has a thickness that can carry the LED chip; and
in the step 5), the first circuit layer formed by the etching process comprises a lead connecting portion surrounding the blind hole and a first positive and negative electrode layer electrically connected to the lead connecting portion, the second circuit layer formed by the etching process comprises a chip mounting portion at the bottom of the blind hole and a second positive and negative electrode layer electrically insulated from the chip mounting portion, wherein the etched chip mounting portion is formed by the thick metal layer at the bottom of the blind hole and is configured to carry the LED chip, and the first positive and negative electrode layer is electrically connected to the second positive and negative electrode layer, to form a positive electrode and a negative electrode of the bracket.

8. The method according to claim 7 , wherein,
before the step 4), the method further comprises: an etching step, comprising removing most of the second metal layer on the lower surface of the circuit substrate by the etching process, to remain at least the second metal layer surrounding the bottom of the blind hole as a basis of the second circuit layer.

9.

Assignees

• Yu Binhai
• Sun Bairong
• Li Weiping
• Xia Xunli
• Li Cheng
• Long Menghua
• Liang Lifang
• Foshan Nationstar Optoelectronics Co Ltd
• Zhu Hai Bontech Electronic Technology Co Ltd

Inventors

• Yu Binhai
• Sun Bairong
• Li Weiping
• Xia Xunli
• Li Cheng
• Long Menghua
• Liang Lifang

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/8506 Primary

  Containers · CPC title