Polysilicon photodetector, methods and applications

Patent metadata

Field	Value
Publication number	US-9153715-B2
Application number	US-201414512738-A
Country	US
Kind code	B2
Filing date	Oct 13, 2014
Priority date	Feb 17, 2011
Publication date	Oct 6, 2015
Grant date	Oct 6, 2015

Abstract

A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Alternatively, the pair of electrical contacts may be located and formed upon separated locations of the polysilicon photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer. Alternatively, the silicon photonic photodetector structure may include appropriate photodetection circuitry. The silicon photonic photodetector structure and related methods avoid the use of germanium and indium phosphide-based materials.

First claim

What is claimed is:

1. A photonic structure comprising:
a strip waveguide located over a substrate;
a polysilicon material photodetector layer in the form of a comparatively lightly doped ring resonator mesa that separates a pair of lower lying plateaus also located over the substrate, the comparatively lightly doped ring resonator mesa being optically coupled with the strip waveguide; and
a pair of p/n comparatively heavily doped electrical contact regions electrically coupled with the pair of lower lying plateaus, where the pair of p/n comparatively heavily doped electrical contact regions and the comparatively lightly doped ring resonator mesa comprise a horizontal diode.

2. The photonic structure of claim 1 wherein the strip waveguide is laterally separated from the polysilicon material photodetector layer.

3. The photonic structure of claim 1 wherein:
the polysilicon material photodetector layer is contiguous with a semiconductor material slab also located over the substrate; and
the polysilicon material photodetector layer and the semiconductor material slab comprise the same polysilicon material.

4. The photonic structure of claim 2 wherein the semiconductor material slab and the polysilicon material photodetector layer have a dopant concentration from about 1e14 to less than about 1e18 dopant atoms per cubic centimeter.

5. The photonic structure of claim 4 wherein:
one of the pair of p/n comparatively heavily doped semiconductor regions comprises a p+ dopant at a concentration from greater than about 1E18 to about 1E22 dopant atoms per cubic centimeter; and
the other of the pair of p/n comparatively heavily doped semiconductor regions comprises an n+ dopant at a concentration from greater than about 1E18 to about 1E22 dopant atoms per cubic centimeter.

6. The photonic structure of claim 1 wherein the polysilicon material photodetector layer does not include germanium.

7. The photonic structure if claim 1 further comprising circuitry located over the substrate and connected to the pair of p/n comparatively heavily doped electrical contacts, and adapted to detect an electrical output signal using at least one of the pair of p/n comparatively heavily doped electrical contact regions when introducing an optical signal at the strip waveguide.

8. The photonic structure of claim 1 wherein the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

9. A method for fabricating a photonic device comprising:
forming over a substrate a strip waveguide;
forming over the substrate a polysilicon material photodetector layer in the form of a comparatively lightly doped ring resonator mesa optically coupled with the strip waveguide and separating a pair of lower lying plateaus; and
forming over the substrate and coupled with the pair of lower lying plateaus a pair of p/n comparatively heavily doped electrical contact regions, where the pair of p/n comparatively heavily doped contact regions and the comparatively lightly doped mesa comprise a horizontal diode.

10. The method of claim 9 wherein the strip waveguide and the polysilicon material photodetector layer are formed simultaneously.

11. The method of claim 9 wherein the polysilicon material photodetector layer does not include germanium.

12. The method of claim 9 further comprising forming over the substrate and connected to the pair of p/n comparatively heavily doped electrical contact regions circuitry adapted to detect an electrical output signal using at least one of the pair of p/n comparatively heavily doped electrical contact regions when introducing an optical signal at the strip waveguide.

13. The method of claim 9 wherein the polysilicon material photodetector layer is formed with defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

14. A method for operating a photonic device comprising:
providing a photonic structure comprising:
a strip waveguide located over a substrate;
a polysilicon material photodetector layer in the form of a comparatively lightly doped ring resonator mesa that separates a pair of lower lying plateaus also located over the substrate, the comparatively lightly doped ring resonator mesa being optically coupled with the strip waveguide; and
a pair of p/n comparatively heavily doped electrical contact regions coupled with the pair of lower lying plateaus, where the pair of p/n comparatively heavily doped electrical contact regions and the comparatively lightly doped mesa comprise a horizontal diode;

introducing an optical signal into the strip waveguide; and
measuring the electrical output signal while using the at least one of the p/n comparatively heavily doped electrical contact regions.

15. The method of claim 14 wherein the photonic structure further comprises circuitry adapted to detect an electrical output signal using at least one of the pair of p/n comparatively heavily doped electrical contact regions when introducing an optical signal at the strip waveguide.

16. The method of claim 14 wherein the polysilicon material photodetector layer including defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

17. The method of claim 14 wherein when introducing the optical signal into the strip waveguide, the optical signal includes a photon energy less than a bandgap of the polysilicon material from which is comprised the polysilicon material photodetector layer.

18. The method of claim 14 wherein the polysilicon material photodetector layer does not comprise germanium.

19. The method of claim 14 wherein the measuring the photodetected signal uses both the electrical contacts.

20. The method of claim 14 further comprising electrically biasing at least one of the electrical contacts.

21. The method of claim 14 wherein the signal is a multiplexed signal.

22. The method of claim 14 wherein the multiplexed signal is demultiplexed and photodetected.

Assignees

• Univ Cornell

Inventors

• Lipson Michal
• Preston Kyle

Classifications

• H10F77/1642

  including only Group IV materials · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• H10F71/1221

  comprising polycrystalline silicon · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F30/10

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title