Systems and Methods for Producing Carbon Solids
US-2024417566-A1 · Dec 19, 2024 · US
US9153643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9153643-B2 |
| Application number | US-201313873345-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 30, 2013 |
| Priority date | Feb 3, 2011 |
| Publication date | Oct 6, 2015 |
| Grant date | Oct 6, 2015 |
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A semiconductor ceramic contains a donor element solid-solved in crystal grains of a SrTiO 3 -based compound, and an acceptor element in a grain boundary layer. The number of tetravalent acceptor elements is 1×10 17 /g or more, as determined from an electron spin resonance absorption spectrum. A mixture of a calcined powder and an acceptor compound is pulverized to a specific surface area of 5.0 to 7.5 m 2 /g before mixing with a binder. Semiconductor ceramic layers having a varistor function are formed by using the semiconductor ceramic forming a highly reliable capacitor which can suppress characteristics variations to stably obtain good electrical characteristics.
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The invention claimed is: 1. A semiconductor grain boundary insulated semiconductor ceramic comprising a principal component which is a SrTiO 3 -based compound, a donor element solid-solved in crystal grains, and an acceptor element present in a grain boundary layer, and in which the number of tetravalent acceptor elements per unit weight (g) is 1×10 17 /g or more. 2. The semiconductor ceramic according to claim 1 , where the number of the tetravalent acceptor…
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