Defect control and stability of dc bias in rf plasma-based substrate processing systems using molecular reactive purge gas
US-2015354061-A1 · Dec 10, 2015 · US
US9150964B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9150964-B2 |
| Application number | US-19137308-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 14, 2008 |
| Priority date | Jun 6, 2008 |
| Publication date | Oct 6, 2015 |
| Grant date | Oct 6, 2015 |
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There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
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What is claimed is: 1. A vacuum processing apparatus comprising: a lock chamber configured to receive a sample and to vary a pressure therein between an atmosphere pressure and a vacuum pressure; a vacuum transfer chamber; a gate valve disposed between the vacuum transfer chamber and the lock chamber at one side face of the lock chamber; a gas diffuser which introduces a gas into the lock chamber; and a diffuser chamber configured to accommodate the gas diffuser which is d…
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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