SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
Semiconductor device
US9147758B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9147758-B2 |
| Application number | US-201414570610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 15, 2014 |
| Priority date | Dec 17, 2013 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes a front surface electrode, a back surface electrode and a semiconductor substrate in which an IGBT and a diode are formed. An outer peripheral back surface p-type region, an outer peripheral back surface n-type region, and an outer peripheral low concentration n-type region are formed in an outer peripheral region. The outer peripheral back surface n-type region is formed on an end surface side of the semiconductor substrate with respect to the outer peripheral back surface p-type region. The outer peripheral low concentration n-type region separates the outer peripheral back surface p-type region and the outer peripheral back surface n-type region from a contact outer peripheral edge p-type region. A p-type impurity concentration in the outer peripheral back surface p-type region decreases toward the end surface. An n-type impurity concentration in the outer peripheral back surface n-type region increases toward the end surface.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate in which an IGBT and a diode are formed; a front surface electrode formed on a front surface of the semiconductor substrate; and a back surface electrode formed on a back surface of the semiconductor substrate, wherein an n-type emitter region of the IGBT, a p-type body region of the IGBT, and a p-type anode region of the diode are formed in a range exposed on the front surface in the semicon…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10D62/127Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9147758B2 cover?
- A semiconductor device includes a front surface electrode, a back surface electrode and a semiconductor substrate in which an IGBT and a diode are formed. An outer peripheral back surface p-type region, an outer peripheral back surface n-type region, and an outer peripheral low concentration n-type region are formed in an outer peripheral region. The outer peripheral back surface n-type region …
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D62/127. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).