Solid-state image sensor having a shielding unit for shielding some of photo-electric converters and image capturing apparatus including the solid-state image sensor
US-9025060-B2 · May 5, 2015 · US
Solid-state image sensor and camera
US9147708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9147708-B2 |
| Application number | US-201314359640-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 9, 2013 |
| Priority date | Jan 18, 2012 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
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Abstract
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An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion.
First claim
Opening claim text (preview).
The invention claimed is: 1. A solid-state image sensor comprising: a semiconductor substrate; a first semiconductor region of a first conductivity type arranged in the semiconductor substrate; a second semiconductor region of a second conductivity type constituting a charge accumulation region, and being arranged in the first semiconductor region; and a lens for condensing light to the second semiconductor region, wherein the second semiconductor region includes a plurali…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10F39/151Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9147708B2 cover?
- An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potent…
- Who is the assignee on this patent?
- Canon Kk
- What technology area does this patent fall under?
- Primary CPC classification H10F39/151. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).