Multi-stack nanosheet structure including semiconductor device
US-2024023326-A1 · Jan 18, 2024 · US
US9147657B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9147657-B2 |
| Application number | US-201314132569-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2013 |
| Priority date | Apr 19, 2011 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
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A repairable memory cell in accordance with one or more embodiments of the present disclosure includes a storage element positioned between a first and a second electrode, and a repair element positioned between the storage element and at least one of the first electrode and the second electrode.
Opening claim text (preview).
What is claimed is: 1. A memory cell, comprising: a storage element positioned between a first and a second electrode, wherein the storage element includes a resistive switching material; and a repair element between the storage element and at least one of the first electrode and the second electrode, wherein the repair element is configured to change from a conductive state to a nonconductive state responsive to the storage element being in a permanent conductive state.…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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