Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9147652B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9147652-B2 |
| Application number | US-201414281662-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 19, 2014 |
| Priority date | Apr 25, 2008 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
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In a layout structure of a standard cell including off transistors 126, 127 unnecessary for logic operation of a circuit, dummy via contacts 116, 117 are disposed on impurity diffusion regions 103, 106 of the off transistors 126, 127 , respectively. Dummy metal interconnects 122, 123 are connected to the dummy via contacts 116, 117 , respectively. Thus, variations in the density of via contacts, which are one of causes lowering the production yield of semiconductor integrated circuits, is reduced, improving manufacturing defects of the via contacts.
Opening claim text (preview).
What is claimed is: 1. A layout structure of a standard cell, comprising: a first metal interconnect for providing a first power potential, the first metal interconnect extending in a first direction; a second metal interconnect for providing a second power potential, the second metal interconnect extending in the first direction; a logic circuit disposed between the first metal interconnect and the second metal interconnect, and including a metal interconnect and a transistor…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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