Light source device including a high energy light source and a wavelength conversion member, illuminating device comprising the same, and vehicle

Patent metadata

Field	Value
Publication number	US-9142733-B2
Application number	US-201414335506-A
Country	US
Kind code	B2
Filing date	Jul 18, 2014
Priority date	Sep 3, 2013
Publication date	Sep 22, 2015
Grant date	Sep 22, 2015

Abstract

A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm 2 . The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr 1-x ,Ba x ) 3 MgSi 2 O 8 :Eu 2+ (0≦x≦1) fluorescent substance, a (Y 1-y ,Gd y ) 3 (Al 1-z ,Ga z ) 5 O 12 :Ce 3+ (0≦y≦1, 0≦z≦1) fluorescent substance, and an Eu 3+ -activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

First claim

The invention claimed is:

1. A light source device comprising:
a semiconductor light-emitting element; and
a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element into a longer wavelength, wherein:
the semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers,
the light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm 2 ,
the wavelength conversion member includes a blue fluorescent substance, a green fluorescent substance, and a red fluorescent substance,
the blue fluorescent substance includes a (Sr 1-x ,Ba x ) 3 MgSi 2 O 8 :Eu 2+ (0≦x≦1) fluorescent substance,
the green fluorescent substance includes a (Y 1-y ,Gd y ) 3 (Al 1-z ,Ga z ) 5 O 12 :Ce 3+ (0≦y<1, 0≦z<1) fluorescent substance, and
the red fluorescent substance includes at least one selected from the group consisting of a LiLaW 2 O 8 :Eu 3+ fluorescent substance, a Ca 2 W 2 O 8 :Eu 3+ fluorescent substance, and a LiGdW 2 O 8 :Eu 3+ fluorescent substance.

2. The light source device according to claim 1 , wherein:
the wavelength conversion member comprises a first fluorescent substance layer and a second fluorescent substance layer,
the second fluorescent substance layer is interposed between the first fluorescent substance layer and the semiconductor light-emitting element, and
the second fluorescent substance layer has a longer peak wavelength than the first fluorescent substance layer.

3. The light source device according to claim 1 , wherein
the wavelength conversion member is formed of a mixture of the blue fluorescent substance, the green fluorescent substance, and the red fluorescent substance.

4. The light source device according to claim 1 , wherein
the semiconductor light-emitting element is a semiconductor laser.

5. The light source device according to claim 1 , further comprising:
at least one of a lens, a mirror and an optical fiber, disposed between the semiconductor light-emitting element and the wavelength conversion member.

6. The light source device according to claim 1 , wherein the light source device produces a white light.

7. The light source device according to claim 1 , wherein the light emitted from the semiconductor light-emitting element has a light energy density of not more than 3.5 kW/cm 2 .

8. The light source device according to claim 1 , wherein
the wavelength conversion member is formed of a stacking structure of a first fluorescent substance layer containing the blue fluorescent substance, a second fluorescent substance layer containing the green fluorescent substance, and a third fluorescent substance layer containing the red fluorescent substance.

9. The light source device according to claim 8 , wherein:
the third fluorescent substance layer is interposed between the semiconductor light-emitting element and the second fluorescent substance layer, and
the second fluorescent substance layer is interposed between the first fluorescent substance layer and the third fluorescent substance layer.

10. An illumination device comprising the light source device according to claim 1 .

11. The illumination device according to claim 10 , wherein the illumination device is a vehicle illumination device.

12. A vehicle comprising the vehicle illumination device according to claim 11 .

Assignees

• Panasonic Corp
• Panasonic Ip Man Co Ltd

Inventors

• Nagasaki Yoshihisa
• Ohbayashi Takashi
• Inoue Osamu
• Okuyama Kojiro
• Nitta Mitsuru
• Shiraishi Seigo

Classifications

• F21S41/176

  Light sources where the light is generated by photoluminescent material spaced from a primary light generating element · CPC title

• F21W2107/10

  for land vehicles · CPC title

• C09K11/7736

  Vanadates; Chromates; Molybdates; Tungstates · CPC title

• F21S41/60

  characterised by a variable light distribution · CPC title

• C09K11/7794

  Vanadates; Chromates; Molybdates; Tungstates · CPC title