Method of fabrication of Al/Ge bonding in a wafer packaging environment and a product produced therefrom

US9139428B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9139428-B2
Application numberUS-201414157456-A
CountryUS
Kind codeB2
Filing dateJan 16, 2014
Priority dateMar 18, 2005
Publication dateSep 22, 2015
Grant dateSep 22, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

First claim

Opening claim text (preview).

What is claimed is: 1. A MEMS device comprising: a first substrate including a microelectromechanical systems (MEMS) feature and a patterned germanium layer; and a second substrate, including a patterned aluminum layer, wherein the germanium of the patterned germanium layer of the first substrate is in direct contact with and matched to the aluminum of the patterned aluminum layer of the second substrate to form a contact area, wherein in the contact area the patterned aluminum layer is properly patterned to match patterned germanium layer. 2. The MEMS device of claim 1 , wherein the second substrate includes electrical circuits. 3. The MEMS device of claim 1 , wherein the first and second substrates are electrically connected. 4. The MEMS device of claim 1 , wherein the patterned aluminum layer and the patterned germanium layer form a seal ring. 5. The MEMS device of claim 1 , wherein the direct contact between germanium and the aluminum comprises a eutectic bond.

Assignees

Inventors

Classifications

  • Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure · CPC title

  • Thermo-compression bonding · CPC title

  • Cavities · CPC title

  • the micromechanical device and the control or processing electronics being separate parts in the same package · CPC title

  • Bonding of solid lids or wafers to the substrate · CPC title

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What does patent US9139428B2 cover?
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized…
Who is the assignee on this patent?
Invensense Inc
What technology area does this patent fall under?
Primary CPC classification B81C1/00238. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Sep 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).