MEMS Fabrication Process with Two Cavities Operating at Different Pressures
US-2015375995-A1 · Dec 31, 2015 · US
US9139428B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9139428-B2 |
| Application number | US-201414157456-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 16, 2014 |
| Priority date | Mar 18, 2005 |
| Publication date | Sep 22, 2015 |
| Grant date | Sep 22, 2015 |
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Official abstract text for this publication.
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
Opening claim text (preview).
What is claimed is: 1. A MEMS device comprising: a first substrate including a microelectromechanical systems (MEMS) feature and a patterned germanium layer; and a second substrate, including a patterned aluminum layer, wherein the germanium of the patterned germanium layer of the first substrate is in direct contact with and matched to the aluminum of the patterned aluminum layer of the second substrate to form a contact area, wherein in the contact area the patterned aluminum layer is properly patterned to match patterned germanium layer. 2. The MEMS device of claim 1 , wherein the second substrate includes electrical circuits. 3. The MEMS device of claim 1 , wherein the first and second substrates are electrically connected. 4. The MEMS device of claim 1 , wherein the patterned aluminum layer and the patterned germanium layer form a seal ring. 5. The MEMS device of claim 1 , wherein the direct contact between germanium and the aluminum comprises a eutectic bond.
Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure · CPC title
Thermo-compression bonding · CPC title
Cavities · CPC title
the micromechanical device and the control or processing electronics being separate parts in the same package · CPC title
Bonding of solid lids or wafers to the substrate · CPC title
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