Method of making metal substrates with structures formed therein
US-2024404922-A1 · Dec 5, 2024 · US
Substrate for semiconductor device, semiconductor device having the substrate, and manufacturing method thereof
US9136455B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136455-B2 |
| Application number | US-201514638336-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 4, 2015 |
| Priority date | Aug 8, 2011 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part. The first metal line is electrically connected to a first electrode of the semiconductor device. The second metal line is electrically connected to a second electrode of the semiconductor device and spaced apart from the first metal line. The metal support part is disposed between the first metal line and the second metal line. The first insulating part is disposed between the first metal line and the metal support part and configured to electrically insulate the first metal line from the metal support part. The second insulating part is disposed between the second metal line and the metal support part and configured to electrically insulate the second metal line from the metal support part.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: forming a first insulating layer on a first surface of a support plate, and forming a second insulating layer on a second surface of the support plate, the second surface being opposite to the first surface; forming a first metal layer on the first insulating layer; forming a second metal layer on the second insulating layer; cutting the first metal layer, the first insulating layer, the sup…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W70/6875Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136455B2 cover?
- A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part. The first metal line is electrically connected to a first electrode of the semiconductor device. The second metal line is electrically connected to a second electrode of the semiconductor device and space…
- Who is the assignee on this patent?
- Univ Sungkyunkwan Res & Bus
- What technology area does this patent fall under?
- Primary CPC classification H10W70/6875. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).