Semiconductor device including image sensor and method of forming the same
US-2024379711-A1 · Nov 14, 2024 · US
Solid-state image sensor, method of manufacturing the same, and camera
US9136407B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136407-B2 |
| Application number | US-201314026460-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 13, 2013 |
| Priority date | Sep 19, 2012 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
Official abstract text for this publication.
A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a solid-state image sensor including a first charge accumulation region, a second charge accumulation region positioned adjacent to the first charge accumulation region, a first transfer gate positioned adjacent to the first charge accumulation region and configured to transfer a charge in the first charge accumulation region, and a second transfer gate positioned adjacent to the second charge accumulation region and configured to tr…
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Classifications
Electricity · mapped topic
- H10F39/8033Primary
Electricity · mapped topic
Electricity · mapped topic
- H10F77/413Primary
Electricity · mapped topic
- H01L31/02327Primary
Electricity · mapped topic
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- What does patent US9136407B2 cover?
- A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer…
- Who is the assignee on this patent?
- Canon Kk
- What technology area does this patent fall under?
- Primary CPC classification H10F39/8033. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).