Field-effect semiconductor device

Patent metadata

Field	Value
Publication number	US-9136397-B2
Application number	US-201313906738-A
Country	US
Kind code	B2
Filing date	May 31, 2013
Priority date	May 31, 2013
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided.

First claim

What is claimed is:

1. A field-effect semiconductor device, comprising a semiconductor body having a main surface and comprising in a vertical cross-section substantially orthogonal to the main surface:
a drift layer of a first conductivity type;
a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and comprising a first side wall, with a rectifying junction being formed at the first side wall; and
two secon…

Assignees

• Infineon Technologies Ag

Inventors

• Konrath Jens
• Schulze Hans-Joachim
• Rupp Roland
• Werner Wolfgang
• Pfirsch Frank

Classifications

• H10D64/64

  Electricity · mapped topic

• H10D62/8325

  Electricity · mapped topic

• H10D62/83

  Electricity · mapped topic

• H10D62/82 Primary

  Electricity · mapped topic

• H10D62/40

  Electricity · mapped topic