Semiconductor device

Patent metadata

Field	Value
Publication number	US-9136388-B2
Application number	US-201213549867-A
Country	US
Kind code	B2
Filing date	Jul 16, 2012
Priority date	Jul 22, 2011
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

First claim

What is claimed is:

1. A semiconductor device comprising:
an oxide semiconductor layer including a channel formation region, a first region, and a second region;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and
a gate electrode layer over the oxide semiconductor layer with a gate insulating film interposed therebetween,
wherein the first region is not overlapped with the gate electrode layer, the source electrode layer and the drai…

Assignees

• Yamazaki Shunpei
• Takahashi Masahiro
• Honda Tatsuya
• Hatano Takehisa
• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Takahashi Masahiro
• Honda Tatsuya
• Hatano Takehisa

Classifications

• H10D62/40

  Electricity · mapped topic

• H10D30/6713

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D62/10

  Electricity · mapped topic

• H10D62/80

  Electricity · mapped topic