Methods for forming recesses in source/drain regions and devices formed thereof
US-12132089-B2 · Oct 29, 2024 · US
Semiconductor device and manufacturing method for same
US9136378B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136378-B2 |
| Application number | US-201113824380-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 15, 2011 |
| Priority date | Sep 17, 2010 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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- Title
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Abstract
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A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the body region, a second portion in contact with the body region, and a third portion in contact with the source region, and a gate electrode provided on the gate insulating film in an area extending across the semiconductor layer outside the body region, the body region, and the source region. The third portion of the gate insulating film has a thickness greater than the thickness of the first portion and the thickness of the second portion.
First claim
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The invention claimed is: 1. A semiconductor device comprising: a first conductive-type semiconductor layer; a second conductive-type body region formed in an upper portion of the semiconductor layer; a first conductive-type source region formed in an upper portion of the body region; a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9136378B2 cover?
- A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first port…
- Who is the assignee on this patent?
- Okumura Keiji, Miura Mineo, Nagao Katsuhisa, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D64/693. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).