Power mosfet and manufacturing method thereof
US-2024322032-A1 · Sep 26, 2024 · US
Silicon carbide semiconductor device
US9136372B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136372-B2 |
| Application number | US-201213531793-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 25, 2012 |
| Priority date | Jun 29, 2011 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon carbide semiconductor device comprising: a silicon carbide semiconductor substrate including a silicon carbide substrate and a drift layer disposed on the silicon carbide substrate, the silicon carbide substrate having one of a first conductivity type and a second conductivity type, the drift layer made of silicon carbide and having the first conductivity type, the silicon carbide semiconductor substrate being an off substrate whose surface has an…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9136372B2 cover?
- In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of t…
- Who is the assignee on this patent?
- Miyahara Shinichiro, Sugimoto Masahiro, Takaya Hidefumi, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/668. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).