Gate isolation features and methods of fabricating the same in semiconductor devices
US-2024379673-A1 · Nov 14, 2024 · US
Monolithic bidirectional silicon carbide switching devices
US9136371B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136371-B2 |
| Application number | US-201414543400-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 17, 2014 |
| Priority date | Jul 26, 2012 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS) structures at the upper surface of the drift layer. The drift layer provides a common drain for the first and second vertical MOS structures. The first and second vertical MOS structures are protected by respective first and second edge termination structures at the upper surface of the drift layer. A monolithic bidirectional switching device according to further embodiments includes a vertical MOS structure at the upper surface of the drift layer, and a diode at the upper surface of the drift layer. The drift layer provides a drain for the vertical MOS structure and a cathode for the diode, and the vertical MOS structure and the diode are protected by respective first and second edge termination structures.
First claim
Opening claim text (preview).
What is claimed is: 1. A monolithic bidirectional switching device, comprising: a drift layer having a first conductivity type and having an upper surface; a vertical metal-oxide semiconductor (MOS) structure at the upper surface of the drift layer; and a diode at the upper surface of the drift layer, wherein the drift layer provides a drain for the vertical MOS structure and a cathode for the diode, and wherein the vertical MOS structure and the diode are surrounded by respec…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136371B2 cover?
- A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS) structures at the upper surface of the drift layer. The drift layer provides a common drain for the first and second vertical MOS structures. The first and second vertical MOS structures are protected by re…
- Who is the assignee on this patent?
- Cree Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/83. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).