Insulated gate bipolar transistor structure having low substrate leakage
US-9214547-B2 · Dec 15, 2015 · US
Semiconductor device having lateral element
US9136362B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136362-B2 |
| Application number | US-201213615912-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2012 |
| Priority date | Sep 27, 2011 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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- Title
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Abstract
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A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×10 18 cm −3 .
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device having a lateral element, the semiconductor device comprising: a semiconductor substrate including a first conductivity-type semiconductor layer; a first electrode on a surface of the semiconductor layer; a second electrode on the surface of the semiconductor layer; and a resistive field plate wound in a scroll shape around the first electrode and extending toward the second electrode, wherein a resistance of the resistive fiel…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136362B2 cover?
- A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The re…
- Who is the assignee on this patent?
- Sakai Takeshi, Yamada Akira, Takahashi Shigeki, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10D12/421. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).