Three-dimensional flash memory using fringing effect and method for manufacturing

Patent metadata

Field	Value
Publication number	US-9136359-B2
Application number	US-201214125853-A
Country	US
Kind code	B2
Filing date	Jun 13, 2012
Priority date	Jun 13, 2011
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

Provided are a three-dimensional flash memory using a fringing effect and a method of manufacturing the same. A through hole is formed through a plurality of gate electrodes vertically stacked on a substrate, and the interior of the through hole is filled with a tunneling insulating layer or an active region. Therefore, a charge storage layer is not formed in the through hole, but is formed outside of the through hole. The charge storage layer is formed in an intercell insulating layer filling a gap between the gate electrodes. When a fringing electric field is applied, the electric charges of the active region are trapped in the charge storage layer through the intercell insulating layer.

First claim

The invention claimed is:

1. A flash memory comprising:
an active region having a semiconductor material;
a tunneling insulating layer formed on the active region;
a gate electrode formed on the tunneling insulating layer;
an intercell insulating layer configured to fill a gap between the gate electrodes and formed on the tunneling insulating layer; and
a charge storage layer formed in the intercell insulating layer to store electric charges through a fringing effect of an…

Assignees

• Song Yun Heub
• Iucf Hyu

Inventors

• Song Yun Heub

Classifications

• H10D30/693

  Electricity · mapped topic

• H10D30/0413 Primary

  Electricity · mapped topic

• H01L27/11582

  Electricity · mapped topic

• H01L29/66833 Primary

  Electricity · mapped topic

• H01L29/7926

  Electricity · mapped topic