Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials
US-2024237336-A9 · Jul 11, 2024 · US
Nonvolatile semiconductor memory device and method for manufacturing same
US9136358B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136358-B2 |
| Application number | US-201314019788-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2013 |
| Priority date | Mar 20, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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- Title
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Abstract
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According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body including a plurality of electrode layers and a plurality of first insulating layers; a first channel body layer penetrating the stacked body; a memory film; an interlayer insulating film provided on the stacked body; a selection gate electrode provided on the interlayer insulating film; a second channel body layer penetrating the selection gate electrode and the interlayer insulating film and connected to the first channel body; a gate insulating film provided between the selection gate electrode and the second channel body layer; a second insulating layer provided on the gate insulating film and on the selection gate electrode; a contact layer provided on the second insulating layer; and a diffusion layer provided between the contact layer and the second insulating layer and connected to the second channel body layer and the contact layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile semiconductor memory device comprising: a foundation layer; a stacked body provided on the foundation layer, and the stacked body including a plurality of electrode layers and a plurality of first insulating layers alternately stacked; a first semiconductor member extending in the stacked body in a stacking direction of the stacked body; a memory film provided between each of the plurality of electrode layers and the first semiconductor m…
Assignees
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Classifications
Electricity · mapped topic
- H10D30/0413Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L29/66833Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136358B2 cover?
- According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body including a plurality of electrode layers and a plurality of first insulating layers; a first channel body layer penetrating the stacked body; a memory film; an interlayer insulating film provided on the stacked body; a selection gate electrode provided on the interlayer insulating film; a second cha…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D30/0413. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).