Method of forming a metal pattern and method of manufacturing a display substrate
US-2015380443-A1 · Dec 31, 2015 · US
Methods for forming amorphous silicon thin film transistors
US9136355B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136355-B2 |
| Application number | US-201314095834-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2013 |
| Priority date | Dec 3, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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Embodiments described herein provide amorphous silicon thin-film transistors (a-Si TFTs) and methods for forming a-Si TFTs. A substrate is provided. A gate electrode is formed above the substrate. An a-Si channel layer is formed above the gate electrode. A contact layer is formed above the a-Si channel layer. The contact layer includes titanium, zinc, arsenic, or a combination thereof. A source electrode and a drain electrode are formed above the contact layer.
First claim
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What is claimed: 1. A method for forming an amorphous silicon (a-Si) thin-film transistor (TFT), the method comprising: providing a substrate; forming a gate electrode above the substrate; forming an a-Si channel layer above the gate electrode; forming a contact layer above the a-Si channel layer, wherein the contact layer comprises one of titanium oxide, zinc oxide, or a combination thereof, wherein the contact layer has a thickness of between about 1 nanometer (nm) and abo…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9136355B2 cover?
- Embodiments described herein provide amorphous silicon thin-film transistors (a-Si TFTs) and methods for forming a-Si TFTs. A substrate is provided. A gate electrode is formed above the substrate. An a-Si channel layer is formed above the gate electrode. A contact layer is formed above the a-Si channel layer. The contact layer includes titanium, zinc, arsenic, or a combination thereof. A source…
- Who is the assignee on this patent?
- Intermolecular Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D30/0316. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).