Photodetector
US-12046618-B2 · Jul 23, 2024 · US
US9136304B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136304-B2 |
| Application number | US-201113276860-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 19, 2011 |
| Priority date | Oct 27, 2010 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Official abstract text for this publication.
A solid-state imaging device includes an imaging element and a logic element. The imaging element includes a first semiconductor substrate, a first wiring layer, and a first metal layer, in which a pixel region which is a light sensing surface is formed. The logic element includes a second semiconductor substrate, a second wiring layer, and a second metal layer, in which a signal processing circuit that processes a pixel signal obtained at the pixel region is formed. The logic element is laminated to the imaging element so that the first metal layer and the second metal layer are bonded to each other, and the first metal layer and the second metal layer are formed on a region excluding a region in which a penetrating electrode layer penetrating a bonding surface of the imaging element and the logic element is formed.
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device comprising: an imaging element that includes a first semiconductor substrate, a first wiring layer that is formed on a surface of the first semiconductor substrate, and a first metal layer that is formed on an upper portion of the first wiring layer, in which a pixel region which is a light sensing surface is formed on a rear surface side of the first semiconductor substrate; and a logic element that includes a second semicondu…
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