Image sensor device
US-2024038804-A1 · Feb 1, 2024 · US
US9136296B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136296-B2 |
| Application number | US-82178110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 23, 2010 |
| Priority date | Jul 3, 2009 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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A photodiode includes a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type that is opposite to the first conductivity type of the first semiconductor layer, and a third semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer. An edge of the first semiconductor layer is inset from an edge of the second semiconductor layer.
Opening claim text (preview).
The invention is claimed as follows: 1. A photodiode comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type that is opposite to the first conductivity type of the first semiconductor layer; a first insulating film formed on end portions of the first semiconductor layer; a wiring layer formed on the first insulating film, wherein the wiring layer includes a plurality of wiring lines; a second…
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