Semiconductor device

Patent metadata

Field	Value
Publication number	US-9136262-B2
Application number	US-201514613643-A
Country	US
Kind code	B2
Filing date	Feb 4, 2015
Priority date	Dec 13, 2011
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

A semiconductor device includes a transistor having a gate electrode, a first electrode, and a second electrode and first and second protection circuits each having one end commonly connected to the gate electrode and the other end connected to the first and second electrodes, respectively. The first and second protection circuits are formed in first and second polysilicon layers, respectively, formed separately on a single field insulating film.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a MOSFET having a gate, a drain and a source;
a gate pad coupled with the gate;
a source pad coupled with the source;
a drain electrode coupled with the drain;
a first protection circuit coupled with the drain and the gate, the first protection circuit including a first pair of diodes whose anodes are coupled each other; and
a second protection circuit coupled with the source and the gate, the second protection c…

Assignees

• Renesas Electronics Corp

Inventors

• Andou Takayoshi

Classifications

• H10D84/80

  Electricity · mapped topic

• H10D30/665

  Electricity · mapped topic

• H10D84/40

  Electricity · mapped topic

• H10D8/25

  Electricity · mapped topic

• H10D89/611 Primary

  Electricity · mapped topic